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IRGP20B60PDPBF Tech Specifications

IRGP20B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2003
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Additional Feature HIGH RELIABILITY, LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 40A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 20 ns
Rise Time 5ns
Turn-Off Delay Time 115 ns
Max Collector Current 40A
JEDEC-95 Code TO-247AC
Collector Emitter Saturation Voltage 2.05V
Test Condition 390V, 13A, 10 Ω, 15V
Turn Off Time-Nom (toff) 138 ns
Gate Charge 68nC
Td (on/off) @ 25°C 20ns/115ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 17ns
Length 15.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Bulk
Part Status Last Time Buy
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 220W
Number of Elements 1
Power Dissipation 220W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.8V
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 25 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
IGBT Type NPT
Current - Collector Pulsed (Icm) 80A
Switching Energy 95μJ (on), 100μJ (off)
Gate-Emitter Thr Voltage-Max 5V
Height 20.3mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRGP20B60PDPBF Documents

Download datasheets and manufacturer documentation for IRGP20B60PDPBF

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