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IRGP30B60KD-EP Tech Specifications

IGBT 600V 60A 304W TO247AD

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2004
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 600V
Current Rating 60A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 46 ns
Rise Time 28ns
Turn-Off Delay Time 185 ns
Max Collector Current 60A
JEDEC-95 Code TO-247AD
Collector Emitter Saturation Voltage 2.35V
Test Condition 400V, 30A, 10 Ω, 15V
Turn Off Time-Nom (toff) 237 ns
Gate Charge 102nC
Td (on/off) @ 25°C 46ns/185ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 42ns
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Part Status Last Time Buy
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 304W
Number of Elements 1
Power Dissipation 304W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.35V
Reverse Recovery Time 125 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 74 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 30A
IGBT Type NPT
Current - Collector Pulsed (Icm) 120A
Switching Energy 350μJ (on), 825μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Radiation Hardening No
Lead Free Lead Free
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IRGP30B60KD-EP Documents

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