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IRGP50B60PD1PBF Tech Specifications

IGBT 600V 75A 390W TO247AC

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Part Status Last Time Buy
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 390W
Number of Elements 1
Power Dissipation 390W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.85V
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 39 ns
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 50A
IGBT Type NPT
Current - Collector Pulsed (Icm) 150A
Switching Energy 255μJ (on), 375μJ (off)
Gate-Emitter Thr Voltage-Max 5V
Height 20.7mm
Width 5.3086mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Published 2004
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Additional Feature HIGH RELIABILITY, LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 75A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 30 ns
Rise Time 10ns
Turn-Off Delay Time 130 ns
Max Collector Current 75A
JEDEC-95 Code TO-247AC
Collector Emitter Saturation Voltage 2.35V
Test Condition 390V, 33A, 3.3 Ω, 15V
Turn Off Time-Nom (toff) 161 ns
Gate Charge 205nC
Td (on/off) @ 25°C 30ns/130ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 20ns
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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