IRGR2B60KDTRRPBF Tech Specifications

IRGR2B60KDTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
Part Status Last Time Buy
ECCN Code EAR99
Max Power Dissipation 35W
Rise Time-Max 25ns
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 6.3A
Collector Emitter Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 2A
Gate Charge 12nC
Td (on/off) @ 25°C 11ns/150ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 75ns
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~150°C TJ
Published 2013
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Base Part Number IRGR2B60
Element Configuration Single
Power - Max 35W
Collector Emitter Voltage (VCEO) 2.25V
Reverse Recovery Time 68 ns
Test Condition 400V, 2A, 100 Ω, 15V
IGBT Type NPT
Current - Collector Pulsed (Icm) 8A
Switching Energy 74μJ (on), 39μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
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