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IRGR3B60KD2PBF Tech Specifications

IGBT 600V 7.8A 52W DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Rise Time-Max 22ns
Power Dissipation 52W
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 2.4V
Reverse Recovery Time 77 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 35 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A
IGBT Type NPT
Current - Collector Pulsed (Icm) 15.6A
Switching Energy 62μJ (on), 39μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Height 1.2446mm
Width 6.223mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 350.003213mg
Operating Temperature -55°C~150°C TJ
Published 2003
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 52W
Peak Reflow Temperature (Cel) 260
Base Part Number IRGR3B60KD2PBF
Number of Elements 1
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 7.8A
JEDEC-95 Code TO-252AA
Collector Emitter Saturation Voltage 2.4V
Test Condition 400V, 3A, 100 Ω, 15V
Turn Off Time-Nom (toff) 211 ns
Gate Charge 13nC
Td (on/off) @ 25°C 18ns/110ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 105ns
Length 6.7056mm
Radiation Hardening No
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IRGR3B60KD2PBF Documents

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