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IRGS30B60KTRRP Tech Specifications

IGBT 600V 78A 370W D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 370W
Peak Reflow Temperature (Cel) 260
Base Part Number IRGS30B60KPBF
Number of Elements 1
Case Connection COLLECTOR
Power - Max 370W
Polarity/Channel Type N-CHANNEL
Max Collector Current 78A
Collector Emitter Saturation Voltage 1.95V
Turn On Time 74 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 30A
IGBT Type NPT
Current - Collector Pulsed (Icm) 120A
Switching Energy 350μJ (on), 825μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 260.39037mg
Operating Temperature -55°C~175°C TJ
Published 2005
Part Status Last Time Buy
Number of Terminations 2
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Element Configuration Single
Input Type Standard
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 2.35V
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 400V, 30A, 10 Ω, 15V
Turn Off Time-Nom (toff) 237 ns
Gate Charge 102nC
Td (on/off) @ 25°C 46ns/185ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 42ns
RoHS Status ROHS3 Compliant
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IRGS30B60KTRRP Documents

Download datasheets and manufacturer documentation for IRGS30B60KTRRP

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