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IRGS4062DTRLPBF Tech Specifications

IGBT DISCRETES

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
Reach Compliance Code compliant
JESD-30 Code R-PSSO-G2
Operating Temperature (Max) 175°C
Rise Time-Max 31ns
Case Connection COLLECTOR
Polarity/Channel Type N-CHANNEL
Turn On Time 64 ns
Turn Off Time-Nom (toff) 164 ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 41ns
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Published 2009
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Transistor Application POWER CONTROL
Power Dissipation-Max (Abs) 250W
Collector Current-Max (IC) 48A
Collector-Emitter Voltage-Max 600V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status RoHS Compliant
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IRGS4062DTRLPBF Documents

Download datasheets and manufacturer documentation for IRGS4062DTRLPBF

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