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IRGS4064DPBF Tech Specifications

IGBT 600V 20A 101W D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2012
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Element Configuration Single
Power - Max 101W
Collector Emitter Voltage (VCEO) 1.91V
Reverse Recovery Time 62 ns
Collector Emitter Saturation Voltage 1.6V
Vce(on) (Max) @ Vge, Ic 1.91V @ 15V, 10A
Gate Charge 32nC
Td (on/off) @ 25°C 27ns/79ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 29ns
Length 10.67mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 260.39037mg
Packaging Tube
Part Status Obsolete
ECCN Code EAR99
Max Power Dissipation 101W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 20A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 10A, 22 Ω, 15V
IGBT Type Trench
Current - Collector Pulsed (Icm) 40A
Switching Energy 29μJ (on), 200μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRGS4064DPBF Documents

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