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IRGS4B60KPBF Tech Specifications

INFINEON IRGS4B60KPBF IGBT Single Transistor, 12 A, 2.5 V, 63 W, 600 V, TO-263, 3 Pins

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Published 2004
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 63W
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 12A
Collector Emitter Saturation Voltage 2.5V
Test Condition 400V, 4A, 100 Ω, 15V
Turn Off Time-Nom (toff) 199 ns
Gate Charge 12nC
Td (on/off) @ 25°C 22ns/100ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 89ns
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation 63W
Input Type Standard
Rise Time 23ns
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
IGBT Type NPT
Current - Collector Pulsed (Icm) 24A
Switching Energy 73μJ (on), 47μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Radiation Hardening No
RoHS Status RoHS Compliant
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