IRGS8B60KPBF Tech Specifications

IRGS8B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 600V
Terminal Form GULL WING
Current Rating 28A
Base Part Number IRGS8B60KPBF
Number of Elements 1
Power Dissipation 167W
Input Type Standard
Rise Time 22ns
Collector Emitter Voltage (VCEO) 2.2V
Collector Emitter Breakdown Voltage 600V
Turn On Time 43 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 8A
IGBT Type NPT
Current - Collector Pulsed (Icm) 34A
Switching Energy 160μJ (on), 160μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Height 4.572mm
Width 9.65mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 167W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 28A
Collector Emitter Saturation Voltage 2.2V
Test Condition 400V, 8A, 50 Ω, 15V
Turn Off Time-Nom (toff) 220 ns
Gate Charge 29nC
Td (on/off) @ 25°C 23ns/140ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 56ns
Length 10.668mm
Radiation Hardening No
Lead Free Lead Free
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