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IRGSL14C40LPBF Tech Specifications

IRGSL14C40LPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2004
Part Status Obsolete
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Current Rating 20A
Number of Elements 1
Power Dissipation 125W
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Max Collector Current 20A
Collector Emitter Saturation Voltage 1.4V
Vce(on) (Max) @ Vge, Ic 1.75V @ 5V, 14A
Td (on/off) @ 25°C 900ns/6μs
Gate-Emitter Thr Voltage-Max 2.2V
Length 10.668mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW SATURATION VOLTAGE
Voltage - Rated DC 430V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Element Configuration Single
Input Type Logic
Rise Time 2.8μs
Collector Emitter Voltage (VCEO) 1.75V
Collector Emitter Breakdown Voltage 430V
Turn On Time 3700 ns
Gate Charge 27nC
Gate-Emitter Voltage-Max 12V
Height 9.652mm
Width 4.826mm
RoHS Status RoHS Compliant
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IRGSL14C40LPBF Documents

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