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IRL1404STRLPBF Tech Specifications

MOSFET N-CH 40V 160A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2002
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 40V
Terminal Form GULL WING
Current Rating 160A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.8W Ta 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 95A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.3V 10V
Fall Time (Typ) 130 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 640A
Avalanche Energy Rating (Eas) 520 mJ
Height 4.703mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount, Through Hole
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Resistance 4mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 3.8W
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 160A Tc
Rise Time 270ns
Vgs (Max) ±20V
Turn-Off Delay Time 38 ns
Threshold Voltage 3V
Drain to Source Breakdown Voltage 40V
Dual Supply Voltage 40V
Nominal Vgs 3 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRL1404STRLPBF Documents

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