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IRL3103PBF Tech Specifications

IRL3103PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2001
Part Status Not For New Designs
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Voltage - Rated DC 30V
Current Rating 64A
Number of Elements 1
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 8.9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 64A Tc
Rise Time 120ns
Vgs (Max) ±16V
Turn-Off Delay Time 14 ns
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Height 15.24mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 12MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Lead Pitch 2.54mm
Power Dissipation-Max 94W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 34A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 9.1 ns
Continuous Drain Current (ID) 64A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 56A
Pulsed Drain Current-Max (IDM) 220A
Nominal Vgs 1 V
Length 10.5156mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRL3103PBF Documents

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