IRL3705NSTRLPBF Tech Specifications

MOSFET N-CH 55V 89A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Resistance 10mOhm
Voltage - Rated DC 55V
Terminal Form GULL WING
Current Rating 89A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.8W Ta 170W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 46A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Fall Time (Typ) 78 ns
Continuous Drain Current (ID) 89A
Gate to Source Voltage (Vgs) 16V
Recovery Time 140 ns
Height 4.699mm
Width 10.16mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 170W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 89A Tc
Rise Time 140ns
Vgs (Max) ±16V
Turn-Off Delay Time 37 ns
Threshold Voltage 2V
Drain to Source Breakdown Voltage 55V
Nominal Vgs 2 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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