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IRL3714ZSPBF Tech Specifications

MOSFET N-CH 20V 36A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Voltage - Rated DC 20V
Current Rating 36A
Power Dissipation-Max 35W Tc
Power Dissipation 35W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.55V @ 250μA
Current - Continuous Drain (Id) @ 25°C 36A Tc
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 20V
Recovery Time 12 ns
Rds On Max 16 mΩ
Height 4.699mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
Part Status Obsolete
Resistance 16mOhm
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Turn On Delay Time 6 ns
Rds On (Max) @ Id, Vgs 16mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±20V
Turn-Off Delay Time 10 ns
Threshold Voltage 2.1V
Drain to Source Breakdown Voltage 20V
Input Capacitance 550pF
Drain to Source Resistance 16mOhm
Nominal Vgs 2.1 V
Length 10.668mm
Radiation Hardening No
RoHS Status RoHS Compliant
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