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IRL530NSTRRPBF Tech Specifications

MOSFET N-CH 100V 17A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain Current-Max (Abs) (ID) 17A
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 150 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.8W Ta 79W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 17A Tc
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.12Ohm
DS Breakdown Voltage-Min 100V
RoHS Status ROHS3 Compliant
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