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IRL6283MTRPBF Tech Specifications

MOSFET N-CH 20V 211A DIRECTFET

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case DirectFET™ Isometric MD
Operating Temperature -40°C~150°C TJ
Published 2013
Part Status Obsolete
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.1W Ta 63W Tc
Power Dissipation 2.1W
FET Type N-Channel
Vgs(th) (Max) @ Id 1.1V @ 100μA
Current - Continuous Drain (Id) @ 25°C 38A Ta 211A Tc
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 192 ns
Continuous Drain Current (ID) 211A
Gate to Source Voltage (Vgs) 12V
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Series HEXFET®, StrongIRFET™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Number of Channels 1
Element Configuration Single
Turn On Delay Time 23 ns
Rds On (Max) @ Id, Vgs 0.75m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 8292pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 158nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Turn-Off Delay Time 116 ns
Threshold Voltage 800mV
Radiation Hardening No
RoHS Status RoHS Compliant
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