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IRL7833SPBF Tech Specifications

MOSFET N-CH 30V 150A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Discontinued
ECCN Code EAR99
Voltage - Rated DC 30V
Current Rating 150A
Power Dissipation-Max 140W Tc
Power Dissipation 140W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 150A Tc
Rise Time 50ns
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Threshold Voltage 1.4V
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 175°C
Height 5.084mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.8MOhm
Technology MOSFET (Metal Oxide)
Number of Channels 1
Element Configuration Single
Turn On Delay Time 18 ns
Rds On (Max) @ Id, Vgs 3.8m Ω @ 38A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4170pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 6.9 ns
Continuous Drain Current (ID) 150A
Gate to Source Voltage (Vgs) 20V
Recovery Time 63 ns
Nominal Vgs 2.3 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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