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IRLB8721PBF Tech Specifications

IRLB8721PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 8.7mOhm
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 65W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.7m Ω @ 31A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1077pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 62A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Recovery Time 24 ns
Height 9.02mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2005
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 65W
Turn On Delay Time 9.1 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 25μA
Current - Continuous Drain (Id) @ 25°C 62A Tc
Rise Time 93ns
Vgs (Max) ±20V
Turn-Off Delay Time 9 ns
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 98 mJ
Nominal Vgs 1.8 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRLB8721PBF Documents

Download datasheets and manufacturer documentation for IRLB8721PBF

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