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IRLH7134TRPBF Tech Specifications

MOSFET N-CH 40V 26A 8PQFN

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 52 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Obsolete
Number of Terminations 5
Subcategory FET General Purpose Power
Terminal Position DUAL
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 58nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±16V
Turn-Off Delay Time 18 ns
Gate to Source Voltage (Vgs) 16V
Pulsed Drain Current-Max (IDM) 640A
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Power Dissipation-Max 3.6W Ta 104W Tc
Power Dissipation 3.6W
Turn On Delay Time 21 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 26A Ta 85A Tc
Rise Time 75ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 26A
Drain-source On Resistance-Max 0.0033Ohm
DS Breakdown Voltage-Min 40V
RoHS Status ROHS3 Compliant
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IRLH7134TRPBF Documents

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