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IRLHS6376TRPBF Tech Specifications

IRLHS6376TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Base Part Number IRLHS6376
Element Configuration Dual
Power Dissipation 1.5W
Turn On Delay Time 4.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.1V @ 10μA
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 11 ns
Threshold Voltage 800mV
Drain Current-Max (Abs) (ID) 3.4A
Drain to Source Breakdown Voltage 30V
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 6-VDFN Exposed Pad
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 6
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.5W
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 63m Ω @ 3.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Rise Time 11ns
Fall Time (Typ) 9.4 ns
Continuous Drain Current (ID) 3.6A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.082Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs 800 mV
REACH SVHC No SVHC
Lead Free Lead Free
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IRLHS6376TRPBF Documents

Download datasheets and manufacturer documentation for IRLHS6376TRPBF

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