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IRLI2910PBF Tech Specifications

MOSFET N-CH 100V 31A TO220FP

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Not For New Designs
Number of Terminations 3
Resistance 30mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 63W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 31A Tc
Rise Time 100ns
Vgs (Max) ±16V
Turn-Off Delay Time 11 ns
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Dual Supply Voltage 100V
Isolation Voltage 2.5kV
Height 9.8044mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 100V
Current Rating 27A
Power Dissipation-Max 63W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26m Ω @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Fall Time (Typ) 55 ns
Continuous Drain Current (ID) 31A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 520 mJ
Nominal Vgs 2 V
Length 10.6172mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRLI2910PBF Documents

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