IRLIZ34NPBF Tech Specifications

IRLIZ34NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Voltage - Rated DC 55V
Current Rating 20A
Power Dissipation-Max 37W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35m Ω @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 22A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 55V
Isolation Voltage 2kV
Height 9.8mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1997
Part Status Active
Number of Terminations 3
Resistance 46mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 31W
Turn On Delay Time 8.9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 22A Tc
Rise Time 10ns
Vgs (Max) ±16V
Turn-Off Delay Time 29 ns
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Dual Supply Voltage 55V
Nominal Vgs 2 V
Length 10.6172mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRLIZ34NPBF Documents

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