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IRLL2703TRPBF Tech Specifications

MOSFET N-CH 30V 3.9A SOT223

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 1999
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 30V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Turn On Delay Time 7.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.9A Ta
Rise Time 24ns
Vgs (Max) ±16V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 3.9A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 180 mJ
Length 6.6802mm
Radiation Hardening No
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 4
Resistance 60mOhm
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 3.9A
JESD-30 Code R-PDSO-G4
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 3.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Forward Voltage 1V
Turn-Off Delay Time 6.9 ns
Gate to Source Voltage (Vgs) 16V
Pulsed Drain Current-Max (IDM) 16A
Height 1.4478mm
Width 3.7mm
RoHS Status ROHS3 Compliant
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IRLL2703TRPBF Documents

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