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IRLML6302TRPBF Tech Specifications

MOSFET P-CH 20V 780MA SOT-23

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2007
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 600mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 540mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 610mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 97pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.45V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) -780mA
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Nominal Vgs -1.5 V
Height 1.016mm
Width 1.397mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Manufacturer Package Identifier Micro3
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Terminal Position DUAL
Current Rating -620mA
Power Dissipation-Max 540mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 780mA Ta
Rise Time 18ns
Vgs (Max) ±12V
Turn-Off Delay Time 22 ns
Threshold Voltage -1.5V
Drain Current-Max (Abs) (ID) 0.78A
Dual Supply Voltage -20V
Min Breakdown Voltage 20V
Length 3.0226mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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