IRLMS5703TRPBF Tech Specifications

IRLMS5703TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 1997
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 180mOhm
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 1.7W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 1.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Threshold Voltage -1V
Drain Current-Max (Abs) (ID) 2.4A
Dual Supply Voltage -30V
Height 1.4478mm
Width 1.75mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SOT-23-6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -30V
Terminal Position DUAL
Current Rating -2.3A
Power Dissipation-Max 1.7W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 8.4 ns
Continuous Drain Current (ID) -2.3A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Nominal Vgs -1 V
Length 2.9972mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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