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IRLR2703PBF Tech Specifications

MOSFET N-CH 30V 23A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Resistance 45mOhm
Additional Feature AVALANCHE RATED
Voltage - Rated DC 30V
Terminal Form GULL WING
Current Rating 23A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 45W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 23A
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Recovery Time 97 ns
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 38W
Turn On Delay Time 8.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 23A Tc
Rise Time 140ns
Vgs (Max) ±16V
Turn-Off Delay Time 12 ns
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Pulsed Drain Current-Max (IDM) 96A
Avalanche Energy Rating (Eas) 77 mJ
Nominal Vgs 1 V
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRLR2703PBF Documents

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