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IRLR3110ZPBF Tech Specifications

MOSFET N-CH 100V 42A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Published 2006
Part Status Discontinued
Termination SMD/SMT
Resistance 14MOhm
Number of Elements 1
Element Configuration Single
Turn On Delay Time 24 ns
Rds On (Max) @ Id, Vgs 14m Ω @ 38A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 48 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 16V
Dual Supply Voltage 100V
Nominal Vgs 2.5 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 140W Tc
Power Dissipation 140mW
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 42A Tc
Rise Time 110ns
Vgs (Max) ±16V
Turn-Off Delay Time 33 ns
Threshold Voltage 2.5V
Drain to Source Breakdown Voltage 100V
Recovery Time 51 ns
Height 2.3876mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRLR3110ZPBF Documents

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