IRLR3636TRPBF Tech Specifications

IRLR3636TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Number of Channels 1
Power Dissipation-Max 143W Tc
Current 50A
Power Dissipation 143W
Turn On Delay Time 45 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 50A Tc
Rise Time 216ns
Vgs (Max) ±16V
Turn-Off Delay Time 43 ns
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Max Junction Temperature (Tj) 175°C
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form GULL WING
Number of Elements 1
Voltage 60V
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.8m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 69 ns
Continuous Drain Current (ID) 99A
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 60V
Height 2.52mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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