IRLR3802PBF Tech Specifications

IRLR3802PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Resistance 8.5mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 88W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.9V @ 250μA
Current - Continuous Drain (Id) @ 25°C 84A Tc
Rise Time 14ns
Vgs (Max) ±12V
Turn-Off Delay Time 21 ns
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 12V
Dual Supply Voltage 12V
Height 2.3876mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 12V
Terminal Form GULL WING
Current Rating 84A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 88W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 15A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2490pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 41nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 4.5V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 84A
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 12V
Nominal Vgs 1.9 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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