IRLR7821PBF Tech Specifications

IRLR7821PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Discontinued
ECCN Code EAR99
Voltage - Rated DC 30V
Current Rating 65A
Power Dissipation-Max 75W Tc
Power Dissipation 75W
FET Type N-Channel
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 65A Tc
Rise Time 4.2ns
Vgs (Max) ±20V
Turn-Off Delay Time 10 ns
Threshold Voltage 1V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 10MOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Turn On Delay Time 11 ns
Rds On (Max) @ Id, Vgs 10m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.2 ns
Continuous Drain Current (ID) 65A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 30V
Height 2.26mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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