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IRLR8103VPBF Tech Specifications

MOSFET N-CH 30V 91A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 9mOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 9m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2672pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 91A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 30V
Height 2.3876mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~150°C TJ
Published 2004
Part Status Discontinued
ECCN Code EAR99
Voltage - Rated DC 30V
Current Rating 89A
Power Dissipation-Max 115W Tc
Power Dissipation 89W
FET Type N-Channel
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 91A Tc
Rise Time 9ns
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
Threshold Voltage 3V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 3 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRLR8103VPBF Documents

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