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IRLR8259PBF Tech Specifications

MOSFET N-CH 25V 57A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 48W Tc
Power Dissipation 48W
Turn On Delay Time 8.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 25μA
Current - Continuous Drain (Id) @ 25°C 57A Tc
Rise Time 38ns
Vgs (Max) ±20V
Turn-Off Delay Time 9.1 ns
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 67 mJ
Nominal Vgs 1.9 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 8.7MOhm
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.7m Ω @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 8.9 ns
Continuous Drain Current (ID) 57A
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 42A
Dual Supply Voltage 25V
Recovery Time 26 ns
Height 2.3876mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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