IRLR9343PBF Tech Specifications

IRLR9343PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Resistance 105MOhm
Voltage - Rated DC -55V
Terminal Form GULL WING
Current Rating -20A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 79W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 105m Ω @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 60A
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 79W
Turn On Delay Time 9.5 ns
Transistor Application AMPLIFIER
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 20A Tc
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 9.5 ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage -55V
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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