IRLS3034TRLPBF Tech Specifications

IRLS3034TRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 375W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7m Ω @ 195A, 10V
Input Capacitance (Ciss) (Max) @ Vds 10315pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 162nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 355 ns
Continuous Drain Current (ID) 195A
Drain-source On Resistance-Max 0.0017Ohm
Avalanche Energy Rating (Eas) 255 mJ
Length 10.668mm
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 375W
Turn On Delay Time 65 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Tc
Rise Time 827ns
Vgs (Max) ±20V
Turn-Off Delay Time 97 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Height 4.572mm
Width 9.65mm
RoHS Status ROHS3 Compliant
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