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IRLSL4030PBF Tech Specifications

MOSFET N-CH 100V 180A TO-262

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 370W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 74 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 180A Tc
Rise Time 330ns
Vgs (Max) ±16V
Turn-Off Delay Time 110 ns
Gate to Source Voltage (Vgs) 16V
Nominal Vgs 2.5 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
Resistance 4.3Ohm
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 370W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.3m Ω @ 110A, 10V
Input Capacitance (Ciss) (Max) @ Vds 11360pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 170 ns
Continuous Drain Current (ID) 180A
Drain to Source Breakdown Voltage 100V
Height 9.652mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRLSL4030PBF Documents

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