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IRLTS6342TRPBF Tech Specifications

MOSFET N-CH 30V 8.3A 6TSOP

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2011
Part Status Active
Number of Terminations 6
Resistance 17.5MOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.1V @ 10μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Rise Time 11ns
Vgs (Max) ±12V
Turn-Off Delay Time 32 ns
Gate to Source Voltage (Vgs) 12V
Recovery Time 20 ns
Height 1.3mm
Width 1.75mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SOT-23-6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 17.5m Ω @ 8.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 8.3A
Drain to Source Breakdown Voltage 30V
Nominal Vgs -400 mV
Length 3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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