IRLU3636PBF Tech Specifications

IRLU3636PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 143W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.8m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 96 ns
Continuous Drain Current (ID) 99A
Drain to Source Breakdown Voltage 60V
Height 6.223mm
Width 2.3876mm
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 143W
Turn On Delay Time 45 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 50A Tc
Rise Time 216ns
Vgs (Max) ±16V
Turn-Off Delay Time 43 ns
Gate to Source Voltage (Vgs) 16V
Nominal Vgs 2.5 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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