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IRLU8743PBF Tech Specifications

MOSFET N-CH 30V 160A I-PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2007
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 135W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.1m Ω @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4880pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 59nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 640A
Nominal Vgs 1.9 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
Resistance 3.1MOhm
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 135W
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 100μA
Current - Continuous Drain (Id) @ 25°C 160A Tc
Rise Time 35ns
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Threshold Voltage 1.9V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 250 mJ
Height 6.22mm
Width 2.3876mm
REACH SVHC No SVHC
Lead Free Lead Free
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