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IRLZ34NSTRLPBF Tech Specifications

MOSFET N-CH 55V 30A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1998
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 35mOhm
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 68W
Turn On Delay Time 8.9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 30A Tc
Rise Time 100ns
Vgs (Max) ±16V
Turn-Off Delay Time 21 ns
Threshold Voltage 2V
Drain to Source Breakdown Voltage 55V
Nominal Vgs 2 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 55V
Terminal Form GULL WING
Current Rating 30A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.8W Ta 68W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35m Ω @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Fall Time (Typ) 29 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 16V
Dual Supply Voltage 55V
Height 4.826mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Contains Lead
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