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PTAB182002TCV2R250XTMA1 Tech Specifications

IC RF FET LDMOS 190W H-49248H-4

Product Attribute Attribute Value
Category Discrete Semiconductors / RF MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Package / Case H-49248H-4
Published 2016
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 65V
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Operating Supply Voltage 28V
Halogen Free Halogen Free
Gain 14.8dB
RoHS Status Non-RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Packaging Tape & Reel (TR)
Part Status Obsolete
ECCN Code EAR99
Current Rating (Amps) 10μA
Frequency 1.805GHz~1.88GHz
Operating Temperature (Max) 200°C
Current - Test 520mA
Transistor Type LDMOS
Power - Output 29W
Lead Free Lead Free
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PTAB182002TCV2R250XTMA1 Documents

Download datasheets and manufacturer documentation for PTAB182002TCV2R250XTMA1

  • Datasheets

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