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PTFA192001EV4R0XTMA1 Tech Specifications

RF MOSFET LDMOS 30V H-36260-2

Product Attribute Attribute Value
Category Discrete Semiconductors / RF MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Package / Case 2-Flatpack, Fin Leads, Flanged
Transistor Element Material SILICON
Published 2009
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Current Rating (Amps) 10μA
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Current - Test 1.6A
Transistor Type LDMOS
DS Breakdown Voltage-Min 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Surface Mount YES
Packaging Strip
Part Status Obsolete
Number of Terminations 2
Voltage - Rated 65V
Terminal Position DUAL
Frequency 1.93GHz~1.99GHz
JESD-30 Code R-CDFM-F2
Configuration SINGLE
Case Connection SOURCE
Polarity/Channel Type N-CHANNEL
Gain 15.9dB
Power - Output 200W
Voltage - Test 30V
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