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PTFA261301E V1 Tech Specifications

IC FET RF LDMOS 130W H-30260-2

Product Attribute Attribute Value
Category Discrete Semiconductors / RF MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Package / Case 2-Flatpack, Fin Leads
Transistor Element Material SILICON
Published 2007
Part Status Obsolete
Number of Terminations 2
Additional Feature HIGH RELIABILITY
Terminal Position DUAL
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature (Max) 200°C
Configuration SINGLE
Case Connection SOURCE
Transistor Application AMPLIFIER
Transistor Type LDMOS
DS Breakdown Voltage-Min 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Surface Mount YES
Packaging Tray
Series GOLDMOS®
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 65V
Current Rating (Amps) 10μA
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 2.68GHz
JESD-30 Code R-XDFM-F2
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Current - Test 1.4A
Polarity/Channel Type N-CHANNEL
Gain 13.5dB
Power - Output 130W
Voltage - Test 28V
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PTFA261301E V1 Documents

Download datasheets and manufacturer documentation for PTFA261301E V1

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