PZTA42H6327XTSA1 Tech Specifications

PZTA42H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Discontinued
Number of Terminations 4
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Base Part Number PZTA42
Configuration SINGLE
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 300V
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Max Frequency 70MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 300V
hFE Min 25
Length 6.5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2007
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 1.5W
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Case Connection COLLECTOR
Transistor Type NPN
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 300V
Transition Frequency 70MHz
Frequency - Transition 70MHz
Emitter Base Voltage (VEBO) 6V
Height 1.6mm
Width 3.5mm
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