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SGB02N60ATMA1 Tech Specifications

Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) TO-263

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 30W
Pin Count 3
Number of Elements 1
Case Connection COLLECTOR
Power - Max 30W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 2A, 118 Ω, 15V
Turn Off Time-Nom (toff) 354 ns
Gate Charge 14nC
Td (on/off) @ 25°C 20ns/259ns
Radiation Hardening No
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 2
Additional Feature LOW CONDUCTION LOSS
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 6A
Turn On Time 34 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 2A
IGBT Type NPT
Current - Collector Pulsed (Icm) 12A
Switching Energy 64μJ
RoHS Status RoHS Compliant
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SGB02N60ATMA1 Documents

Download datasheets and manufacturer documentation for SGB02N60ATMA1

  • Datasheets

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SGB02N120 International Rectifier (Infineon Technologies) Transistors - IGBTs - Single 5454
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SGB02N60 Infineon Specialized Hot ICs 43234
SGB02N60ATMA1 International Rectifier (Infineon Technologies) Transistors - IGBTs - Single 2564

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