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SGD02N120BUMA1 Tech Specifications

SGD02N120BUMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code no
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
JEDEC-95 Code TO-252AA
Current - Collector (Ic) (Max) 6.2A
Test Condition 800V, 2A, 91 Ω, 15V
Turn Off Time-Nom (toff) 375 ns
Gate Charge 11nC
Td (on/off) @ 25°C 23ns/260ns
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2007
Part Status Last Time Buy
Number of Terminations 2
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Base Part Number *GD02N120
JESD-30 Code R-PSSO-G2
Number of Elements 1
Case Connection COLLECTOR
Power - Max 62W
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 2A
IGBT Type NPT
Current - Collector Pulsed (Icm) 9.6A
Switching Energy 220μJ
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SGD02N120BUMA1 Documents

Download datasheets and manufacturer documentation for SGD02N120BUMA1

  • Datasheets

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