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SI4410DYTRPBF Tech Specifications

SI4410DYTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 8
ECCN Code EAR99
Voltage - Rated DC 30V
Terminal Position DUAL
Current Rating 10A
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10A Ta
Rise Time 7.7ns
Vgs (Max) ±20V
Turn-Off Delay Time 38 ns
Threshold Voltage 1V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2001
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 13.5mOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.5m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1585pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 44 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 400 mJ
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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SI4410DYTRPBF Documents

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