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SI4420DYTRPBF Tech Specifications

MOSFET N-CH 30V 12.5A 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2004
Part Status Not For New Designs
Number of Terminations 8
Resistance 9mOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 12.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 47 ns
Continuous Drain Current (ID) 12.5A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 50A
Nominal Vgs 1 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 30V
Terminal Position DUAL
Current Rating 12.5A
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 12.5A Ta
Rise Time 10ns
Vgs (Max) ±20V
Turn-Off Delay Time 55 ns
Threshold Voltage 1V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 400 mJ
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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