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SKB02N120ATMA1 Tech Specifications

SKB02N120ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 6.2A
Collector Emitter Breakdown Voltage 1.2kV
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 2A
IGBT Type NPT
Current - Collector Pulsed (Icm) 9.6A
Switching Energy 220μJ
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 62W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Case Connection COLLECTOR
Power - Max 62W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 1.2kV
Reverse Recovery Time 50 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 800V, 2A, 91 Ω, 15V
Turn Off Time-Nom (toff) 375 ns
Gate Charge 11nC
Td (on/off) @ 25°C 23ns/260ns
RoHS Status ROHS3 Compliant
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SKB02N120ATMA1 Documents

Download datasheets and manufacturer documentation for SKB02N120ATMA1

  • Datasheets

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