SKW25N120FKSA1 Tech Specifications

INFINEON SKW25N120IGBT Single Transistor, 46 A, 3.6 V, 313 W, 1.2 kV, TO-247AC, 3 Pins

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 3
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation 313W
Input Type Standard
Rise Time 40ns
Collector Emitter Voltage (VCEO) 1.2kV
Reverse Recovery Time 90 ns
Collector Emitter Breakdown Voltage 1.2kV
Turn On Time 86 ns
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 25A
IGBT Type NPT
Current - Collector Pulsed (Icm) 84A
Switching Energy 3.7mJ
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 313W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 46A
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 800V, 25A, 22 Ω, 15V
Turn Off Time-Nom (toff) 862 ns
Gate Charge 225nC
Td (on/off) @ 25°C 45ns/730ns
RoHS Status ROHS3 Compliant
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